Electron states and recombination velocities at semiconductor surfaces and interfaces

2014 The concept of dangling bond states is reviewed. It is shown that the Schottky barrier height can be correlated with the average self energy of surface dangling bonds. The same property holds true for band offsets at semiconductor heterojunctions. The model explains the relation found by Tersoff between these two quantities. A second part is devoted to the theoretical determination of surface recombination velocities. The Stevenson-Keyes model is shown to be able to provide recombination velocities of order 105 to 107 cm/s. Recent work on InP is discussed. Finally a semiclassical expression of the multiphonon capture cross sections is used, providing more information on the surface states which dominate recombination. Revue Phys. Appl. 22 (1987) 789-795 AOÛT 1987, Classification Physics Abstracts 72.20J 73.40 73.40V